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(R)
VNQ660SP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE VNQ660SP
(*) Per each channel
RDS(on) 50m (*)
IOUT 6A
VCC 36 V
OUTPUT CURRENT PER CHANNEL: 6A s CMOS COMPATIBLE INPUTS s OPEN LOAD DETECTION (OFF STATE) s UNDERVOLTAGE & OVERVOLTAGE nSHUT- DOWN s OVERVOLTAGE CLAMP s THERMAL SHUT-DOWN s CURRENT LIMITATION s VERY LOW STAND-BY POWER DISSIPATION s PROTECTION AGAINST: nLOSS OF GROUND & LOSS OF VCC s REVERSE BATTERY PROTECTION (**)
s
10
1
PowerSO-10TM
ORDER CODES
PACKAGE TUBE T&R VNQ660SP13TR
PowerSO-10TM VNQ660SP
DESCRIPTION The VNQ660SP is a monolithic device made by using| STMicroelectronics VIPower M0-3 ABSOLUTE MAXIMUM RATING
Symbol VCC -VCC IOUT IR IIN ISTAT IGND
Technology, intended for driving resistive or inductive loads with one side connected to ground. This device has four independent channels. Builtin thermal shut down and output current limitation protect the chip from over temperature and short circuit.
Parameter Supply voltage (continuous) Reverse supply voltage (continuous) Output current (continuous), per each channel Reverse output current (continuous), per each channel Input current Status current Ground current at TC<25C (continuous) Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT - STATUS - OUTPUT - VCC Power dissipation at TC=25C Junction operating temperature Storage temperature Non repetitive clamping energy at TC=25C
Value 41 -0.3 Internally limited -15 +/- 10 +/- 10 -200 4000 4000 5000 5000 113.6 -40 to 150 -65 to 150 150
Unit V V A A mA mA mA V V V V W C C mJ
VESD
Ptot Tj Tstg EC
(**) See application schematic at page 8
July 2003
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VNQ660SP
BLOCK DIAGRAM
VCC
OVERVOLTAGE UNDERVOLTAGE DEMAG 1
DRIVER 1
OUTPUT 1 ILIM1 DEMAG 2
INPUT 1 INPUT 2 INPUT 3 INPUT 4 STATUS STATUS
DRIVER 4 DRIVER 2
OUTPUT 2 ILIM2 DEMAG 3
LOGIC
DRIVER 3
OUTPUT 3 ILIM3 DEMAG 4
OVERTEMP. 1 OVERTEMP. 2 OVERTEMP. 3 OVERTEMP. 4
OUTPUT 4 ILIM4
OPEN LOAD OFF-STATE
GND
CURRENT AND VOLTAGE CONVENTIONS
IS IIN1 INPUT 1 VCC OUTPUT 1 VIN1 VIN2 IIN2 INPUT 2 IIN3 INPUT 3 VIN3 IIN4 INPUT 4 VIN4 STATUS VSTAT OUTPUT 4 GND VOUT4 OUTPUT 3 VOUT3 IOUT4 OUTPUT 2 IOUT3 IOUT1 IOUT2 VOUT1 VOUT2 VCC
ISTAT
IGND
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VNQ660SP
CONNECTION DIAGRAM (TOP VIEW)
STATUS INPUT 4 INPUT 3 INPUT 2 INPUT 1
6 7 8 9 10 11 VCC
5 4 3 2 1
GND OUTPUT 4 OUTPUT 3 OUTPUT 2 OUTPUT 1
THERMAL DATA
Symbol Rthj-case Rthj-amb Parameter Thermal resistance junction-case (MAX) (all channels on) Thermal resistance junction-ambient (MAX) Value 1.1 51.1 (*) Unit C/W C/W
(*) When mounted on a standard single-sided FR-4 board with 0.5cm of Cu (at least 35 m thick). Horizontal mounting and no artificial air flow.
ELECTRICAL CHARACTERISTICS (VCC=6V up to 24V; -40CSymbol VCC (**) VUSD (**) VUVhyst (**) VOV (**) VOVhyst (**) Parameter Operating supply voltage Undervoltage shutdown Undervoltage hysteresis Overvoltage shutdown Overvoltage hysteresis Test Conditions Min 6 3.5 0.2 36 0.25 Typ 13 4.6 Max 36 6 1 Unit V V V V V A A mA m m m A A A A
Off state; Input=0V; VCC=13.5V IS (**) Supply current Off state; Input=0V; VCC=13.5V Tj=25C On state Input=3.25V; 9V(**) Per device.
12 12 6 40 85 0 -75
40 25 12 50 100 130 50 0 5 3
On state resistance Off state output current Off State Output Current Off State Output Current Off State Output Current
IOUT=1A, Tj=150C; 9V3/16
VNQ660SP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING (VCC=13V)
Symbol td(on) td(off) dVOUT/dt(on) Parameter Turn-on delay time Turn-on delay time Turn-on voltage slope Test Conditions RL=13 channels 1,2,3,4 RL=13 channels 1,2,3,4 RL=13 channels 1,2,3,4 Min Typ 40 40 See relative diagram See relative diagram Max 70 140 Unit s s V/s
dVOUT/dt(off)
Turn-off voltage slope
RL=13 channels 1,2,3,4
V/s
PROTECTIONS (per each channel)
Symbol TTSD TR Thyst Ilim Vdemag VSTAT ILSTAT CSTAT VSCL Parameter Shutdown temperature Reset temperature Thermal hysteresis DC Short circuit current Turn-off output voltage clamp Status low output voltage Status leakage current Status pin input capacitance Status clamp voltage Test Conditions Min 150 135 7 6 Typ 170 15 10 Max 200 25 18 18 VCC-41 VCC-48 VCC-55 0.5 10 25 6 6.8 -0.7 8 Unit C C C A A V V A pF V V
9VLOGIC INPUT (per each channel)
Symbol VIL VIH VHYST IIH IIL CIN VICL Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input high level voltage Input Current Input Capacitance Input Clamp Voltage Test Conditions Min 3.25 0.5 VIN=3.25V VIN=1.25V IIN=1mA IIN=-1mA 10 1 6 6.8 -0.7 40 8 Typ Max 1.25 Unit V V V A A pF V V
OPENLOAD DETECTION (off state) per each channel
Symbol tSDL VOL TDOL
(*) See Figure 1
Parameter Status Delay Openload Voltage Detection Threshold Openload Detection Delay at Turn Off
Test Conditions (*) VIN=0V VCC=18V (*)
Min
Typ
Max 20 3.5 300
Unit s V s
1.5
2.5
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VNQ660SP
ELECTRICAL TRANSIENT REQUIREMENTS
ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 Class C E I C C C C C C II C C C C C E III C C C C C E IV C C C C C E I -25 V +25 V -25 V +25 V -4 V II -50 V +50 V -50 V +50 V -5 V TEST LEVELS III IV -75 V +75 V -100 V +75 V -6 V -100 V +100 V -150 V +100 V -7 V Delays and Impedance 2 ms 10 0.2 ms 10 0.1 s 50 0.1 s 50 100 ms, 0.01
Test Levels Result
Contents All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device.
SWITCHING CHARACTERISTICS
VLOAD 90% 80%
dVOUT/dt (on)
dVOUT/dt(off)
10% t VIN
td(on)
tr
td(off)
t
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VNQ660SP
TRUTH TABLE (per each channel)
CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > VOL Output Current < IOL INPUT L H L H H L H L H L H L H L H OUTPUT L H L X X L L L L L L H H L H STATUS H H H (Tj < TTSD) H (Tj > TTSD) L H L X X H H L H H L
Figure 1: Status timing waveforms
OPENLOAD STATUS TIMING VIN
OVERTEMP STATUS TIMING
VIN
VSTAT tDOL tSDL
VSTAT tSDL tSDL
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VNQ660SP
Figure 2: Waveforms
NORMAL OPERATION INPUTn LOAD VOLTAGEn STATUS UNDERVOLTAGE VUSDhyst VUSD INPUTn LOAD VOLTAGEn STATUSn undefined
VCC
OVERVOLTAGE VCCVOV
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VNQ660SP
APPLICATION SCHEMATIC
+5V
+5V
Rprot STATUS
VCC1,2
Dld Rprot INPUT1 OUTPUT1 C
Rprot
INPUT2 OUTPUT2
Rprot INPUT3 Rprot INPUT4 GND OUTPUT4 OUTPUT3
RGND VGND
DGND
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.
GND PROTECTION REVERSE BATTERY
NETWORK
AGAINST
Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND 600mV / (IS(on)max). 2) RGND (-VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device's datasheet. Power Dissipation in RGND (when VCC<0: during reverse battery situations) is: PD= (-VCC)2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the
sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary depending on how many devices are ON in the case of several high side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND) in the ground line. A resistor (RGND=1k) should be inserted in parallel to DGND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device
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VNQ660SP
ground. This shift will not vary if more than one HSD shares the same diode/resistor network.
LOAD DUMP PROTECTION
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table.
C I/Os PROTECTION:
If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the C I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of C and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os. -VCCpeak/Ilatchup Rprot (VOHC-VIH-VGND) / IIHmax Calculation example: For VCCpeak= - 100V and Ilatchup 20mA; VOHC 4.5V 5k Rprot 65k. Recommended Rprot value is 10k.
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VNQ660SP
Off State Output Current
IL(off1) (A)
10 9 8 7 6 5 4 3 2
High Level Input Current
Iih (A)
7
Off state Vcc=24V Vout=0V
6
Vin=3.25V
5
4
3
2
1 1 0 -50 -25 0 25 50 75 100 125 150 175 0 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Input Clamp Voltage
Vicl (V)
8 7.8 7.6 7.4 7.2 7 6.8 6.6
Input High Level
Vih (V)
3.6 3.4 3.2 3 2.8 2.6 2.4
Iin=1mA
6.4 6.2 6 -50 -25 0 25 50 75 100 125 150 175
2.2 2 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Input Low Level
Vil (V)
2.8 2.6 2.4 2.2 2
Input Hysteresis Voltage
Vhyst (V)
2 1.8 1.6 1.4 1.2 1
1.8 0.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
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VNQ660SP
Overvoltage Shutdown
Vov (V)
54 52 50
ILIM Vs Tcase
Ilim (A)
20 17.5 15
48 46 44 42 40 5 38 36 34 -50 -25 0 25 50 75 100 125 150 175 2.5 0 -50 -25 0 25 50 75 100 125 150 175 12.5 10 7.5
Tc (C)
Tc (C)
Turn-on Voltage Slope
dVout/dt(on) (V/ms)
500 450
Turn-off Voltage Slope
dVout/dt(off) (V/ms)
700
600 400 350 300 250 200 150 100 100 50 0 -50 -25 0 25 50 75 100 125 150 175 0 -50 -25 0 25 50 75 100 125 150 175 300
Vcc=13V Rl=13Ohm
500
Vcc=13V Rl=13Ohm
400
200
Tc (C)
Tc (C)
On State Resistance Vs Tcase
RDS(on) (mOhm)
100 90 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 175
On State Resistance Vs VCC
RDS(on) (mOhm)
100 90
Iout=1A Vcc=9V; 13V; 18V
Iout=1A
80 70 60 50
Tc=150C
Tc=25C
40 30 20 10 0 8 9 10 11 12 13 14 15 16 17 18 19 20
Tc= - 40C
Tc (C)
Vcc (V)
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VNQ660SP
Status Clamp Voltage
Vscl (V)
8 7.8
Status Leakage Current
Ilstat (A)
0.05 0.045
Istat=1mA
7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 -25 0 25 50 75 100 125 150 175 0.04 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 -50 -25
Vstat=5V
0
25
50
75
100
125
150
175
Tc (C)
Tc (C)
Status Low Output Voltage
Vstat (V)
0.6 0.525
Open Load Off State Voltage Detection Threshold
Vol (V)
5 4.5
Istat=1.6mA
0.45
Vin=0V
4 3.5
0.375 0.3 0.225 0.15
3 2.5 2 1.5 1
0.075 0 -50 -25 0 25 50 75 100 125 150 175
0.5 0 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
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VNQ660SP
PowerSO-10TM THERMAL DATA
PowerSO-10TM PC Board
Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm, Cu thickness=35m, Copper areas: from minimum pad lay-out to 8cm2).
Rthj-amb Vs. PCB copper area in open box free air condition
RTHj_amb (C/W)
55
Tj-Tamb=50C
50 45 40 35 30
0 2 4 6 8 10
PCB Cu heatsink area (cm^2)
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VNQ660SP
PowerSO-10TM MECHANICAL DATA
DIM. A A (*) A1 B B (*) C C (*) D D1 E E2 E2 (*) E4 E4 (*) e F F (*) H H (*) h L L (*) (*)
(*) Muar only POA P013P
mm. MIN. 3.35 3.4 0.00 0.40 0.37 0.35 0.23 9.40 7.40 9.30 7.20 7.30 5.90 5.90 1.27 1.25 1.20 13.80 13.85 0.50 1.20 0.80 0 2 1.80 1.10 8 8 0.047 0.031 0 2 1.35 1.40 14.40 14.35 0.049 0.047 0.543 0.545 TYP MAX. 3.65 3.6 0.10 0.60 0.53 0.55 0.32 9.60 7.60 9.50 7.60 7.50 6.10 6.30 MIN. 0.132 0.134 0.000 0.016 0.014 0.013 0.009 0.370 0.291 0.366 0.283 0.287 0.232 0.232
inch TYP. MAX. 0.144 0.142 0.004 0.024 0.021 0.022 0.0126 0.378 0.300 0.374 300 0.295 0.240 0.248 0.050 0.053 0.055 0.567 0.565 0.002 0.070 0.043 8 8
B
0.10 A B
10
H
E
E2
E
E4
1
SEATING PLANE e
0.25
B
DETAIL "A"
A
C D = D1 = = = SEATING PLANE
h
A F A1
A1
L DETAIL "A"
P095A
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VNQ660SP
PowerSO-10TM SUGGESTED PAD LAYOUT
14.6 - 14.9
B
TUBE SHIPMENT (no suffix)
CASABLANCA MUAR
C
10.8- 11 6.30
A A
C
0.67 - 0.73 1 2 3 4 5 10 9 8 7 6 1.27 0.54 - 0.6
B
9.5
All dimensions are in mm. Base Q.ty Bulk Q.ty Tube length ( 0.5) Casablanca Muar 50 50 1000 1000 532 532 A B C ( 0.1) 0.8 0.8
10.4 16.4 4.9 17.2
TAPE AND REEL SHIPMENT (suffix "13TR")
REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 600 600 330 1.5 13 20.2 24.4 60 30.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 24 4 24 1.5 1.5 11.5 6.5 2
End
All dimensions are in mm.
Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components
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VNQ660SP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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